| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,500 pcs
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4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Military Grade | |
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| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N5416 is a PNP silicon bipolar junction transistor designed for general purpose low power applications requiring high frequency switching. It features a maximum collector-emitter voltage (VCEO) of 300V and a maximum collector current of 1A.
Electrical characteristics include a typical transition frequency (fT) of 15MHz at 50mA and 10V, a minimum DC current gain (hFE) of 30 at 50mA and 10V, and a maximum VCE saturation voltage of 2.5V at 50mA and 5mA base current. The device is rated for a maximum power dissipation of 1W at 25°C ambient temperature.
The transistor is offered in a TO-205AD (TO-39) through-hole metal can package. It is RoHS compliant and operates over a junction temperature range of -65°C to +200°C.
The maximum collector-emitter voltage (VCEO) is 300V.
The maximum DC collector current is 1A.
It is available in a TO-205AD (TO-39) through-hole metal can package.
Yes, the datasheet states it is RoHS compliant.
The operating junction temperature range is -65°C to +200°C.
The typical transition frequency is 15MHz at IC=50mA and VCE=10V.