2N5415 2N5415 is a PNP silicon low-power transistor with 200V collector-emitter breakdown voltage and 1A collector current, housed in a TO-39 metal can package.
Mfr Part #:

2N5415

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
2N5415 is a PNP silicon low-power transistor with 200V collector-emitter breakdown voltage and 1A collector current, housed in a TO-39 metal can package.
Total Stock: 156 pcs

2N5415 Available from 3 distributors

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127 pcs
127 pcs On Request 1 On Request On Request 946 On Request On Request
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23 pcs
23 pcs On Request 1 On Request On Request 99+ On Request On Request
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6 pcs
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2N5415 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Military Grade
Military Qualification Level
Mounting Type
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N5415 Description

Short technical summary and product information.

The 2N5415 is a PNP silicon low-power transistor designed for general purpose and high-reliability applications. It features a collector-emitter breakdown voltage of 200V and a maximum collector current of 1A, with a power dissipation of 1W. The device offers a minimum DC current gain (hFE) of 30 at 50mA collector current and 10V collector-emitter voltage, and a transition frequency of 15MHz.

 

This transistor is available in a through-hole TO-205AD (TO-39) metal can package, suitable for military and high-reliability applications. It is qualified to JAN, JANTX, JANTXV, and JANS levels per MIL-PRF-19500/485, making it suitable for demanding environments.

 

The 2N5415 is RoHS3 compliant and has an MSL rating of 1 (unlimited). It is ideal for low-power switching and amplification circuits where high voltage capability and through-hole mounting are required.

2N5415 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2N5415 PNP Silicon Low-Power Transistor
Subcategory: Single BJT

2N5415 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: No

2N5415 Features

  • PNP silicon low-power transistor.
  • 200V collector-emitter breakdown voltage.
  • 1A maximum collector current.
  • 1W power dissipation capability.
  • Available in TO-39 metal can package.

2N5415 Applications

  • General purpose low-power switching.
  • High-reliability military electronics.
  • Low-power amplification circuits.
  • High-voltage signal processing.

2N5415 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the 2N5415?

200V

What is the maximum collector current of the 2N5415?

1A

What is the power dissipation of the 2N5415?

1W

What package is the 2N5415 available in?

TO-205AD (TO-39) metal can, through-hole

Is the 2N5415 RoHS compliant?

RoHS3 Compliant (unverified)

What is the DC current gain (hFE) of the 2N5415?

Minimum 30 at Ic=50mA, Vce=10V

What military qualification levels are available for the 2N5415?

JAN, JANTX, JANTXV, JANS per MIL-PRF-19500/485

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