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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
26 pcs
|
26 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N5415 is a PNP bipolar junction transistor manufactured by Microchip Technology. It features a collector-emitter breakdown voltage (VCEO) of 200V, a maximum collector current of 1A, and a power dissipation of 750mW. The DC current gain (hFE) is a minimum of 30 at 50mA collector current and 10V VCE. The saturation voltage is a maximum of 2V at 5mA base current and 50mA collector current. This transistor is designed for general-purpose switching and amplification applications. It is housed in a through-hole TO-205AA (TO-5-3 Metal Can) package, with a supplier device package of TO-5AA. The operating junction temperature range is -65°C to 200°C. The part is listed as RoHS3 Compliant (unverified) and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $16.80 | $16.80 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
PNP.
200 V.
1 A.
750 mW.
-65°C to 200°C (junction).
TO-205AA (TO-5-3 Metal Can) through-hole.
Listed as RoHS3 Compliant (unverified).