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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,500 pcs
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6500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N5415 is a PNP silicon epitaxial planar transistor from Solid State Devices Inc. It is designed for general purpose low-power switching and amplification applications, with military qualification up to JANS level per MIL-PRF-19500/485 for high-reliability use. Key electrical ratings include a maximum collector-emitter voltage of 200V, maximum collector current of 1A, and power dissipation of 1W. DC current gain (hFE) is a minimum of 30 at Ic=50mA and Vce=10V, with a typical transition frequency of 15MHz. The device features a maximum Vce saturation voltage of 2.5V at Ib=5mA and Ic=50mA. The operating junction temperature range extends to 200°C. The transistor is offered in a through-hole TO-205AD (TO-39) metal can package, suitable for high-temperature and rugged environments. It is RoHS3 compliant.
200V
TO-205AD (TO-39) metal can package
Maximum junction temperature is 200°C
Yes, RoHS3 compliant per datasheet
Minimum 30 at Ic=50mA, Vce=10V
Typical 15 MHz
Maximum 2.5V at Ib=5mA, Ic=50mA