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2N5401RLRAG PNP bipolar transistor, 150V collector-emitter breakdown, 600mA collector current, 625mW power dissipation. Through-hole TO-92 package.
Mfr Part #:

2N5401RLRAG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP bipolar transistor, 150V collector-emitter breakdown, 600mA collector current, 625mW power dissipation. Through-hole TO-92 package.
✓ Total Stock: 2,000 pcs

2N5401RLRAG Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
2,000 pcs
On Request
2000 pcs On Request 1 On Request On Request On Request On Request On Request
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2N5401RLRAG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Medical Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2N5401RLRAG Description

Short technical summary and product information.

This is a PNP bipolar junction transistor from ON Semiconductor, designed for general-purpose amplification and switching applications. It features a collector-emitter breakdown voltage of 150V and a maximum collector current of 600mA.

 

The transistor offers a DC current gain (hFE) of 60 minimum at 10mA collector current and 5V VCE, and a transition frequency of 300MHz. The saturation voltage is 500mV maximum at 5mA base current and 50mA collector current.

 

The device is housed in a through-hole TO-92 package (TO-226-3, TO-92-3 Long Body with formed leads) and operates over a junction temperature range of -55°C to 150°C. It is RoHS3 compliant and has an MSL of 1 (unlimited).

2N5401RLRAG Quick Information

Product Type: PNP Bipolar Transistor
Canonical Name: 2N5401RLRAG PNP Bipolar Transistor
Subcategory: Single PNP

2N5401RLRAG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N5401RLRAG Features

  • PNP bipolar transistor with 150V collector-emitter breakdown.
  • Maximum collector current of 600mA.
  • Power dissipation rated at 625mW.
  • DC current gain (hFE) minimum 60 at 10mA.
  • Transition frequency of 300MHz.

2N5401RLRAG Applications

  • General purpose switching and amplification
  • Medium voltage amplifier stages
  • Driver for small signal loads
  • Audio preamplifier circuits
  • High voltage switching applications

2N5401RLRAG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage?

150V maximum.

What package is the 2N5401RLRAG available in?

Through-hole TO-92 package (TO-226-3, TO-92-3 Long Body with formed leads).

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the 2N5401RLRAG RoHS compliant?

Yes, it is listed as RoHS3 compliant.

What is the maximum collector current?

600mA.

What is the maximum power dissipation?

625mW.

What is the DC current gain (hFE)?

Minimum 60 at 10mA collector current and 5V VCE.

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