| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,950 pcs
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5950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The 2N5401 is a PNP silicon amplifier transistor manufactured by Thomson-CSF. It is designed for high voltage and low power switching and amplification applications, making it suitable for telephony systems and other circuits requiring operation at voltages up to 150V.
Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 150V, a collector-base breakdown voltage (VCBO) of 160V, and a continuous collector current (IC) of up to 600mA. The device operates within a junction temperature range of -55°C to +150°C.
This transistor is housed in a TO-92 package, suitable for through-hole mounting. It is also available in tape and reel packaging. The 2N5401 is noted as being Pb-Free.
Its complementary NPN pair is the 2N5551, which can be used in conjunction for designing power amplifiers like Class B amplifiers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N5401 transistor is 150 Vdc.
The 2N5401 transistor has a continuous collector current (IC) rating of 600 mAdc.
The operating and storage junction temperature range for the 2N5401 is -55°C to +150°C.
The 2N5401 transistor is supplied in a TO-92 package.
The 2N5401 is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2N5401 is 1 Unlimited.