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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9 pcs
|
9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Case Material | |
| Collector Base Cutoff Current (Maximum @ VCB=100 V, E open) | |
| Collector Base Cutoff Current (Maximum @ VCB=120 V, E open) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Voltage (VCEO) | |
| Conflict Minerals | |
| Current | |
| DC Current Gain (Minimum @ IC=1 mA, VCE=5 V) | |
| DC Current Gain (Minimum @ IC=50 mA, VCE=5 V) | |
| DC Current Gain (Minimum/Maximum @ Ic=10 mA, Vce=5 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Cutoff Current (Max @ 3V) | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Peak Collector Current | |
| Power | |
| SVHC Present | |
| Solder Assembly Conditions | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vce Saturation (Maximum @ Ib=-1 mA, Ic=-10 mA) | |
| Voltage | |
| Weight |
The 2N5401 is a PNP general purpose bipolar junction transistor designed for signal processing, switching, and amplification applications. It features a maximum collector-emitter voltage of 150V and a continuous collector current rating of 600mA, with a peak current capability of 1A. The device offers a DC current gain (hFE) range of 60 to 240 at 10mA, 5V, ensuring consistent performance across moderate current levels.
With a maximum power dissipation of 625mW and a junction temperature range of -55°C to 150°C, the 2N5401 is suitable for commercial and industrial grade environments. The transistor is housed in a TO-92 (TO-226) through-hole package, weighing approximately 0.18g, and is compatible with standard soldering conditions of 260°C for 10 seconds.
The 2N5401 is RoHS3 compliant, REACH unaffected, and compliant with conflict minerals regulations. It is commonly used as a complementary transistor to the 2N5551 NPN type.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.33 | $0.33 |
| 10+ | $0.24 | $0.24 |
| 100+ | $0.14 | $0.14 |
| 500+ | $0.09 | $0.09 |
| 1,000+ | $0.07 | $0.07 |
| 2,500+ | $0.07 | $0.07 |
| 5,000+ | $0.06 | $0.06 |
| 10,000+ | $0.05 | $0.05 |
| 20,000+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 150V.
The maximum continuous collector current is 600mA, with a peak current of 1A.
The maximum power dissipation is 625mW.
The junction temperature range is -55°C to 150°C.
Yes, the 2N5401 is RoHS3 compliant (exemption 7a) per the datasheet.
The 2N5401 is available in a TO-92 (TO-226) through-hole package.
The DC current gain ranges from 60 to 240 at 10mA, 5V.