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2N5401 The 2N5401 is a general-purpose PNP bipolar transistor from Diotec Semiconductor. It features a 150V collector-emitter voltage, 600mA collector current, and 625mW power dissipation in a TO-92 package.
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2N5401

Available from 1 distributors
Mfr Name: Diotec Semiconductor
Diotec Semiconductor
The 2N5401 is a general-purpose PNP bipolar transistor from Diotec Semiconductor. It features a 150V collector-emitter voltage, 600mA collector current, and 625mW power dissipation in a TO-92 package.
✓ Total Stock: 3,566 pcs

2N5401 Available from 1 distributor

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2N5401 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Conflict Minerals
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Industrial Grade
Junction Temperature
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight
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2N5401 Description

Short technical summary and product information.

The 2N5401 is a general-purpose PNP bipolar junction transistor manufactured by Diotec Semiconductor. It is designed for signal processing, switching, and amplification applications in commercial and industrial grade equipment.

 

Key electrical specifications include a maximum collector-emitter voltage of 150V, a maximum collector-base voltage of 160V, and a maximum emitter-base voltage of 5V. The transistor can handle a continuous collector current of 600mA and a peak collector current of 1A. Power dissipation is rated at 625mW, and the junction temperature range is -55°C to 150°C.

 

The DC current gain (hFE) ranges from 50 to 240 depending on test conditions, with a transition frequency of 400MHz. The collector-emitter saturation voltage is as low as 0.2V at Ic=10mA, Ib=1mA.

 

The 2N5401 is available in a TO-92 through-hole package (TO-226-3, TO-92-3), weighing approximately 0.18g. The case material is UL 94V-0, and it is compliant with RoHS (exemption 7a), REACH, and Conflict Minerals regulations.

2N5401 Quick Information

Product Type: Bipolar Transistor
Canonical Name: 2N5401 General Purpose PNP Transistor
Subcategory: Single PNP Transistor

2N5401 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N5401 Features

  • PNP general-purpose bipolar transistor.
  • 150V collector-emitter voltage rating.
  • 600mA continuous collector current.
  • 625mW power dissipation capability.
  • TO-92 through-hole package.

2N5401 Applications

  • Ideal for signal processing circuits.
  • Used in switching and amplification stages.
  • Suitable for commercial and industrial equipment.
  • Works as complementary pair with 2N5551.

2N5401 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2N5401?

The maximum collector-emitter voltage (VCEO) is 150V.

What is the maximum collector current of the 2N5401?

The maximum DC collector current is 600mA, with a peak collector current of 1A.

What is the power dissipation rating of the 2N5401?

The maximum power dissipation is 625mW.

What is the operating temperature range of the 2N5401?

The operating junction temperature range is -55°C to 150°C.

Is the 2N5401 RoHS compliant?

Yes, the 2N5401 is RoHS compliant (exemption 7a) per the datasheet.

What package is the 2N5401 available in?

The 2N5401 is available in a TO-92 through-hole package (TO-226-3, TO-92-3).

What is the DC current gain (hFE) of the 2N5401?

The DC current gain ranges from 50 to 240 depending on test conditions, with a typical range of 60-240 at Ic=10mA, Vce=5V.

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