| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,040 pcs
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6040 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N5400G from ON Semiconductor is a PNP bipolar junction transistor (BJT) suitable for various electronic circuits. It offers a collector-emitter breakdown voltage of 120V and can handle a maximum collector current of 600mA.
This transistor operates with a maximum power dissipation of 625mW and has a transition frequency of 400MHz, making it suitable for moderate-frequency applications. The Vce saturation is specified at 500mV typical at 5mA base current and 50mA collector current, with a minimum DC current gain (hFE) of 40 at 10mA collector current and 5V Vce.
Packaged in a TO-92-3 (TO-226-3) through-hole configuration, the 2N5400G is designed for easy mounting on printed circuit boards. It operates within a temperature range of -55°C to 150°C.
Key electrical characteristics include a low collector cutoff current of 100nA (ICBO). The part status is listed as Obsolete.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N5400G is a PNP type transistor.
The maximum collector current (Ic) for the 2N5400G is 600mA.
The maximum collector-emitter breakdown voltage for the 2N5400G is 120V.
The maximum Vce Saturation for the 2N5400G is 500mV at a test condition of 5mA, 50mA.
The maximum power dissipation for the 2N5400G is 625mW.
The operating temperature range for the 2N5400G is -55°C to 150°C.
The 2N5400G is available in a TO-226-3, TO-92-3 (TO-226AA) package.