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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,400 pcs
|
1400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter On Voltage (VBE(on)) (VCE=10V, IC=2.0mA) | |
| Base-Emitter Saturation Voltage (Maximum @ IC=300 mA, IB=30 mA) | |
| Base-Emitter Saturation Voltage (Maximum @ IC=50 mA, IB=2.5 mA) | |
| Collector Cut-off Current (ICBO) (VCB=40V) | |
| Collector Cut-off Current (ICES) (VCB=40V) | |
| Collector-Base Breakdown Voltage (VCBO) | |
| Collector-Emitter Saturation Voltage (Maximum @ IC=50 mA, IB=2.5 mA) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ VCE=5 V, IC=300 mA) | |
| DC Current Gain (hFE) (Minimum/Maximum @ VCE=10 V, IC=2.0 mA) | |
| Emitter Cut-off Current (IEBO) (VEB=4.0V) | |
| Emitter-Base Breakdown Voltage (VEBO) | |
| Input Capacitance (Cib) (VCB=0.5V, f=1MHz) | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) @ Vcb=10V, f=1MHz | |
| Power | |
| Power Derating | |
| Small-Signal Current Gain (hfe) (VCE=10V, IC=2.0mA, f=1MHz) | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction to Ambient (RθJA) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N5366 is a PNP bipolar junction transistor from On Semiconductor designed for general purpose amplifier applications. It features a collector-emitter breakdown voltage of 40V, continuous collector current of 500mA, and power dissipation of 625mW. The device offers high DC current gain (hFE) ranging from 80 to 300 at VCE=10V, IC=2mA, making it suitable for low to medium current amplification.
Electrical characteristics include low collector-emitter saturation voltage of 0.25V at 50mA collector current, and base-emitter on voltage of 0.5V to 0.8V. The transistor is housed in a through-hole TO-92-3 package (TO-226-3, TO-92-3) with 3 leads. It operates over a junction temperature range of -55°C to 150°C, with a thermal resistance of 200°C/W junction-to-ambient.
Designed for general purpose amplifier circuits, the 2N5366 is suitable for applications requiring collector currents up to 300mA. It is RoHS compliant and REACH unaffected, with MSL level 1.
| Qty | Low | High |
|---|---|---|
| 4,537+ | $0.07 | $0.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V minimum.
500mA.
625mW maximum.
Through-hole TO-92-3 (TO-226-3, TO-92-3).
-55°C to 150°C (junction temperature).
Yes, RoHS3 compliant (unverified).
80 to 300.