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2N5339 2N5339 is an NPN bipolar junction transistor from Microchip Technology. It features a 100V collector-emitter breakdown voltage and 5A collector current capability.
Mfr Part #:

2N5339

Available from 2 distributors
Mfr Name: Microchip Technology
Microchip Technology
2N5339 is an NPN bipolar junction transistor from Microchip Technology. It features a 100V collector-emitter breakdown voltage and 5A collector current capability.
Total Stock: 3,601 pcs
$ Price Range: $34.62

2N5339 Available from 2 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,600 pcs
3600 pcs On Request 1 On Request On Request On Request On Request On Request
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1 pcs
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2N5339 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N5339 Description

Short technical summary and product information.

The 2N5339 is a single NPN bipolar junction transistor manufactured by Microchip Technology. It is designed for general purpose switching and amplification applications requiring moderate power handling.

 

Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 100V, a continuous collector current (Ic) rating of 5A, and a power dissipation (Pd) of 1W. The device offers a minimum DC current gain (hFE) of 60 at a test condition of 2A collector current and 2V collector-emitter voltage. The maximum collector-emitter saturation voltage (Vce(sat)) is 1.2V at a base current of 500mA and collector current of 5A.

 

The transistor is housed in a TO-205AD (TO-39-3 Metal Can) package and is designed for through-hole mounting. It has an operating temperature range of -55°C to 200°C, making it suitable for use in harsh environments.

2N5339 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2N5339 NPN Bipolar Transistor
Subcategory: Single NPN

2N5339 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N5339 Estimated Pricing

Qty Low High
1+ $34.62 $34.62

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N5339 Features

  • NPN bipolar junction transistor design.
  • 100V collector-emitter breakdown voltage.
  • 5A continuous collector current rating.
  • 1W power dissipation capability.
  • Through-hole TO-39 metal can package.

2N5339 Applications

  • Suitable for general purpose switching circuits.
  • Used in medium-power amplification stages.
  • Ideal for industrial control applications.
  • Applicable in power management systems.

2N5339 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the 2N5339?

The collector-emitter breakdown voltage (Vceo) is 100V.

What is the maximum collector current for the 2N5339?

The maximum continuous collector current (Ic) is 5A.

What is the power dissipation of the 2N5339?

The power dissipation (Pd) is 1W.

What package type is the 2N5339 available in?

The 2N5339 is available in a TO-205AD (TO-39-3 Metal Can) package, with a supplier device package of TO-39.

What is the operating temperature range of the 2N5339?

The operating temperature range is -55°C to 200°C.

What is the DC current gain (hFE) of the 2N5339?

The minimum DC current gain (hFE) is 60 at a test condition of Ic=2A and Vce=2V.

What is the saturation voltage of the 2N5339?

The maximum collector-emitter saturation voltage (Vce(sat)) is 1.2V at a test condition of Ib=500mA and Ic=5A.

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