| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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498 pcs
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498 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| AEC Qualified | |
| Automotive Grade | |
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| Medical Grade | |
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| Tape & Reel |
The Central Semiconductor Corp 2N5322 is a PNP silicon power switching transistor suitable for medium power amplifier and switching applications. This device features a Collector Emitter Voltage (VCEO) of 50V and a continuous Collector Current (IC) of up to 2.1A. The maximum power dissipation is rated at 10W when the case temperature is 25°C.
Packaged in a TO-39 Metal Can, the 2N5322 is designed for through-hole mounting. Its operating and storage junction temperature range is from -65°C to +200°C. Key electrical characteristics include a typical DC Current Gain (hFE) of 40-250 at IC=0.5A, VCE=4V, and a Collector Emitter Saturation Voltage (VCE(sat)) of 0.7V at IC=500mA, IB=50mA. The transistor also exhibits a typical Turn On Time (ton) of 100ns and Turn Off Time (toff) of 1000ns under specified test conditions.
This transistor is part of a series that includes NPN variants (2N5320, 2N5321) and a complementary PNP variant (2N5323). The datasheet indicates RoHS3 compliance, MSL 1, and REACH Unaffected status.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector Emitter Voltage (VCEO) for the 2N5322 is 50V.
The maximum continuous Collector Current (IC) for the 2N5322 is 2.1A.
The power dissipation of the 2N5322 at 25°C case temperature (Tc) is 10W.
The operating and storage junction temperature range for the 2N5322 is -65°C to +200°C.
The 2N5322 transistor comes in a TO-39 Metal Can package.
The typical DC Current Gain (hFE) for the 2N5322 is 40-250 at IC=0.5A, VCE=4V.
The typical turn-on time (ton) for the 2N5322 is 100ns, and the typical turn-off time (toff) is 1000ns.
