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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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156 pcs
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156 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N5322 is a PNP bipolar junction transistor from Solid State Devices Inc. It features a minimum collector-emitter breakdown voltage of 75V and a nominal collector current of 2A. Maximum power dissipation is 1W. DC current gain (hFE) is at least 30 when tested at Ic=500mA and Vce=4V. Vce saturation voltage is 700mV maximum at Ib=50mA and Ic=500mA.
The transistor operates over a junction temperature range of -65°C to 200°C. It is designed for through-hole mounting and comes in a TO-39 metal can package (also listed as TO-205AD). This package provides robust mechanical support and good thermal performance.
The 2N5322 is suitable for general purpose switching and amplification circuits where PNP polarity is required. Its moderate voltage and current ratings make it useful in a variety of low- to medium-power applications.
PNP
75 V minimum
2 A
1 W
-65°C to 200°C (junction temperature)
RoHS3 Compliant (unverified)
Through-hole TO-39 metal can (TO-205AD, TO-39-3)