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61 pcs
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61 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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11 pcs
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11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N5320 from STMicroelectronics is a silicon planar epitaxial NPN transistor housed in a hermetic TO-39 metal package. This transistor is well-suited for medium power amplifier and switching applications due to its characteristics, including a low VCE(sat) and a forward-current transfer ratio (hFE) ranging from 30 to 130 at specific test conditions.
Key electrical specifications include a collector-emitter voltage (VCEO) of 75V and a continuous collector current (IC) of up to 2A. The transistor also offers a thermal resistance junction-to-case (RθJC) of 25°C/W, indicating efficient heat dissipation when mounted appropriately. Its operating temperature range spans from -65°C to +200°C, making it suitable for various environmental conditions.
The 2N5320 is designed for through-hole mounting, facilitating integration into circuit boards. Its robust construction and electrical parameters make it a reliable choice for designers working on power amplification and switching circuits where performance and durability are critical.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (V(BR)CEO) is 75V minimum.
The maximum continuous collector current (IC) is 2A.
The 2N5320 is supplied in a TO-39 metal package.
The operating temperature range for the 2N5320 is -65°C to +200°C.
The thermal resistance (RθJC) from junction to case is typically 25°C/W.