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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6 pcs
|
6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N5320 is an NPN bipolar junction transistor from On Semiconductor designed for general-purpose switching and amplification applications. It features a maximum collector-emitter voltage (Vceo) of 75V and a maximum collector current (Ic) of 2A, with a power dissipation rating of 10W. The device offers a minimum DC current gain (hFE) of 30 at 500mA collector current and 4V collector-emitter voltage. The maximum Vce saturation voltage is 500mV at a base current of 50mA and collector current of 500mA.
The transistor is housed in a TO-205AD / TO-39-3 metal can package with through-hole mounting, and the supplier device package is TO-39. This package provides robust thermal performance and mechanical stability for a variety of circuit designs.
Typical applications include medium-power switching circuits, driver stages, and linear amplifiers where the 75V breakdown voltage and 2A current capability are required. The RoHS3 compliant and REACH unaffected status supports use in environmentally sensitive designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $29.85 | $29.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) is 2 A.
The maximum collector-emitter voltage (Vceo) is 75 V.
The package is TO-205AD, TO-39-3 Metal Can (through-hole) with a supplier device package of TO-39.
RoHS3 compliant per distributor data.
The maximum power dissipation is 10 W.
Minimum hFE is 30 at Ic=500mA, Vce=4V.