| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,898 pcs
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6898 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N5320 is an NPN bipolar junction transistor from Solid State Devices Inc (SSDI) designed for general purpose switching and amplification. It features a collector-emitter breakdown voltage of 75V, a continuous collector current rating of 2A, and a maximum power dissipation of 10W.
DC current gain (hFE) is a minimum of 30 at 500mA collector current and 4V collector-emitter voltage. The collector-emitter saturation voltage is a maximum of 500mV at 500mA collector current and 50mA base current. The junction operating temperature range is -65°C to 200°C.
The transistor is mounted in a through-hole TO-39 metal can package (also known as TO-205AD). It is supplied RoHS3 compliant and REACH unaffected, though these compliance statuses are unverified.
This is an NPN bipolar junction transistor.
The collector-emitter breakdown voltage (Vceo) is 75V.
The maximum collector current (Ic) is 2A.
The power dissipation (Pd) is 10W.
The junction operating temperature range is -65°C to 200°C.
The transistor is available in a TO-39 (TO-205AD) metal can through-hole package.
The component is marked as RoHS3 compliant, but this status is unverified.
