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2N5303 2N5303 is an NPN high-power silicon bipolar transistor in a TO-3 package. It features 80V collector-emitter voltage, 20A collector current, and 200W power dissipation.
Mfr Part #:

2N5303

Available from 1 distributors
Mfr Name: NTE Electronics
NTE Electronics
2N5303 is an NPN high-power silicon bipolar transistor in a TO-3 package. It features 80V collector-emitter voltage, 20A collector current, and 200W power dissipation.
✓ Total Stock: 3,362 pcs

2N5303 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
3,362 pcs
On Request
3362 pcs On Request 1 On Request On Request On Request On Request On Request
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2N5303 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Delay Time
Frequency
Military Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2N5303 Description

Short technical summary and product information.

The 2N5303 is an NPN high-power silicon bipolar junction transistor in a TO-204AA (TO-3) through-hole package. It is designed for high-current switching and linear amplifier applications, with an 80 V collector-emitter voltage rating, 20 A collector current capability, and 200 W total power dissipation.

 

Key electrical specifications include a minimum DC current gain (hFE) of 15 at Ic = 15 A and Vce = 2 V, a maximum collector-emitter saturation voltage of 2 V at Ib = 4 A and Ic = 20 A, and a transition frequency of 2 MHz. The junction operating temperature range is -65°C to +200°C, and the thermal resistance from junction to case is 0.875 °C/W.

 

The device is qualified per MIL-PRF-19500/456 with JANTX/JANTXV levels, supporting use in high-reliability and military power circuits. The TO-3 metal package provides robust thermal coupling for high-power designs.

2N5303 Quick Information

Product Type: Bipolar (BJT) Transistor
Series: JAN
Canonical Name: 2N5303 NPN High-Power Silicon Transistor
Subcategory: Single NPN Power Transistor

2N5303 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N5303 Features

  • Provides 80V collector-emitter breakdown voltage.
  • Handles 20A continuous collector current.
  • Dissipates 200W maximum total power.
  • Uses TO-3 through-hole metal package.
  • Meets MIL-PRF-19500/456 qualification standards.

2N5303 Applications

  • Used for high-power switching and linear amplification.
  • Ideal in motor drive and inverter circuits.
  • Works as voltage regulator pass element.
  • Suitable for high-reliability military power systems.

2N5303 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2N5303?

80 V.

What package is the 2N5303 available in?

TO-204AA (TO-3) through-hole package.

What is the operating temperature range of the 2N5303?

-65°C to +200°C (junction temperature).

Is the 2N5303 RoHS compliant?

RoHS3 compliant.

What is the collector current rating of the 2N5303?

20 A.

How much power can the 2N5303 dissipate?

200 W total power dissipation.

What is the DC current gain (hFE) of the 2N5303 at 15 A?

Minimum 15 at Ic = 15 A, Vce = 2 V.

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