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78 pcs
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78 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The 2N5237 is a high-performance NPN Silicon Power Transistor. It is designed to handle significant power with a maximum collector current of 10A and various collector-emitter breakdown voltages up to 170V.
This transistor is available in TO-5 and TO-39 (TO-205AD) packages, suitable for through-hole mounting. Its electrical characteristics include a minimum forward current transfer ratio (hFE) of 40 at 10A and a collector-emitter saturation voltage (VCE(sat)) of 2.5V at 10A.
The operating and storage junction temperature range is -65°C to +200°C, with thermal resistance values of 0.020°C/mW for junction-to-case and 0.175°C/mW for junction-to-ambient.
This component is processed per MIL-PRF-19500/394 and is part of the JAN series, indicating its suitability for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N5237 transistor has a maximum collector-emitter breakdown voltage (VCEO) of 170 Vdc.
The maximum continuous collector current (IC) for the 2N5237 is 10 Adc.
The 2N5237 has a minimum hFE of 40 at IC = 10 Adc and VCE = 5.0 Vdc.
The 2N5237 transistor is available in TO-5 and TO-39 (TO-205AD) packages.
The operating and storage junction temperature range for the 2N5237 is -65°C to +200°C.