| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | 647 | On Request | On Request | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The 2N5195 is a silicon epitaxial-base PNP transistor in a Jedec SOT-32 plastic package, designed for medium power linear and switching applications in industrial equipment.
Key electrical ratings include a maximum collector-emitter voltage of -80V, a continuous collector current of -4A (peak -7A), and a total power dissipation of 40W at case temperatures up to 25°C. The device offers a DC current gain (hFE) of 20 minimum at 1.5A and 2V, and a transition frequency of 2 MHz.
The complementary NPN type is the 2N5192. The transistor is housed in a through-hole TO-225AA / TO-126-3 package (also designated SOT-32-3) and is RoHS3 compliant.
The maximum collector-emitter voltage (VCEO) is -80 V.
The maximum continuous collector current is -4 A, with a peak current of -7 A.
The total power dissipation is 40 W at case temperature ≤ 25°C.
The 2N5195 is available in a through-hole TO-225AA / TO-126-3 package, also designated as SOT-32-3.
The 2N5195 is listed as RoHS3 compliant, though this has not been independently verified.
The complementary NPN type is the 2N5192 from STMicroelectronics.