| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N5195 is a medium power PNP silicon transistor from NTE Electronics, intended for linear and switching applications in industrial equipment. It features a collector-emitter breakdown voltage of 80V, a continuous collector current of 4A, and a power dissipation of 40W at case temperature 25°C. The DC current gain is minimum 20 at 1.5A, and the transition frequency is 2MHz. The transistor is housed in a SOT-32-3 through-hole package, also known as TO-225AA or TO-126-3. The operating junction temperature range is up to 150°C. The complementary NPN type is the 2N5192.
The collector-emitter breakdown voltage (VCEO) is 80V.
The 2N5195 is available in a SOT-32-3 through-hole package, also known as TO-225AA or TO-126-3.
The maximum operating junction temperature is 150°C.
The RoHS status is reported as compliant, but this is unverified due to conflicting distributor data.
The minimum DC current gain is 20 at Ic=-1.5A, Vce=-2V.
The typical transition frequency is 2 MHz.
The maximum continuous collector current is 4 A.