| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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874 pcs
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874 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N5193 series from Central Semiconductor (also listed by STMicroelectronics) are PNP Silicon Power Transistors manufactured using an epitaxial base process. These transistors are designed for medium power amplifier and switching applications. They are complementary to the NPN 2N5190 series.
The 2N5193 is housed in a TO-126 package. Key electrical characteristics include a maximum Collector-Emitter Voltage (VCEO) of 40V for the 2N5193 variant, a continuous Collector Current (IC) of up to 4.0A, and a maximum Power Dissipation (PD) of 40W at 25°C case temperature. The operating and storage junction temperature range is from -65°C to +150°C.
This transistor series is suitable for various amplifier and switching tasks where medium power handling is required. The TO-126 package is a common choice for power applications requiring moderate heat dissipation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the 2N5193 is 40V.
The maximum continuous Collector Current (IC) for the 2N5193 is 4.0A.
The maximum Power Dissipation (PD) for the 2N5193 is 40W at 25°C case temperature.
The 2N5193 transistor comes in a TO-126 package.
The operating and storage junction temperature range for the 2N5193 is -65°C to +150°C.