2N5192G The 2N5192G is an NPN silicon power transistor from onsemi. It features a maximum collector-emitter voltage of 80V, a continuous collector current of 4A, and a power dissipation of 40W.
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2N5192G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The 2N5192G is an NPN silicon power transistor from onsemi. It features a maximum collector-emitter voltage of 80V, a continuous collector current of 4A, and a power dissipation of 40W.
Total Stock: 19,020 pcs
$ Price Range: $0.64 - $1.46

2N5192G Available from 1 distributor

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2N5192G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB)
Collector Cutoff Current (Maximum @ Vcb=80 V, Ie=0)
Collector Cutoff Current (Maximum @ Vce=80 V, Ib=0)
Collector Cutoff Current (Maximum @ Vce=80 V, Veb(off)=1.5 V)
Collector Cutoff Current (Maximum @ Vce=80 V, Veb(off)=1.5 V, Tc=125 °C)
Collector-Base Voltage (VCBO)
Collector-Emitter Sustaining Voltage
Collector-Emitter Voltage (VCEO)
Current
DC Current Gain (Minimum @ IC = 4.0 A, VCE = 2 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Human Body Model
ESD Machine Model
Emitter Cutoff Current (Iebo)
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Power
SVHC Present
Shipping
Supplier Device Package
Tape & Reel
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N5192G Description

Short technical summary and product information.

The 2N5192G is an NPN silicon power transistor designed for use in power amplifier and switching circuits. It offers a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 4.0A. The device can dissipate up to 40W of power at a case temperature of 25°C.

 

This transistor features a minimum DC current gain (hFE) of 20 at 1.5A and 2V, and a maximum collector-emitter saturation voltage of 1.4V at 1A base current and 4A collector current. It is housed in a through-hole TO-225AA (TO-126-3) package and is supplied in boxes of 500 units.

 

The 2N5192G is part of a family that includes the 2N5190G (40V) and 2N5191G (60V) variants. Its complementary PNP parts are the 2N5194 and 2N5195. The device is Pb-Free and RoHS compliant.

2N5192G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2N5192G NPN Silicon Power Transistor
Subcategory: Single BJT

2N5192G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N5192G Estimated Pricing

Qty Low High
1+ $1.46 $1.46
10+ $0.96 $0.96
100+ $0.64 $0.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N5192G Features

  • NPN silicon power transistor design.
  • 80V maximum collector-emitter voltage.
  • 4.0A continuous collector current.
  • 40W power dissipation capability.
  • Pb-Free and RoHS3 compliant.

2N5192G Applications

  • Use in power amplifier circuits.
  • Suitable for switching applications.
  • Ideal for general purpose power stages.

2N5192G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2N5192G?

The maximum collector-emitter voltage (VCEO) is 80V.

What is the maximum collector current rating?

The maximum continuous collector current (IC) is 4.0A.

What is the power dissipation of the 2N5192G?

The maximum power dissipation is 40W at a case temperature of 25°C.

What package type is the 2N5192G available in?

It is available in a through-hole TO-225AA (TO-126-3) package.

What is the operating junction temperature range?

The operating and storage junction temperature range is -65°C to +150°C.

Is the 2N5192G RoHS compliant?

Yes, the 2N5192G is Pb-Free and RoHS3 compliant as per the datasheet.

What is the minimum DC current gain (hFE) of the 2N5192G?

The minimum hFE is 20 at a test condition of Ic=1.5A and Vce=2V.

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