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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,321 pcs
|
1321 pcs | On Request | 1 | On Request | On Request | 1834+ | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector Cutoff Current (Maximum @ VCB = 60 V, IE = 0) | |
| Collector Cutoff Current (Maximum @ VCE = 60 V, IB = 0) | |
| Collector Cutoff Current (Maximum @ VCE = 60 V, VEB(off) = 1.5 V) | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| ESD Human Body Model | |
| ESD Machine Model | |
| Emitter Cutoff Current (Iebo) | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Shipping Quantity | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance - Junction to Case | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N5191G is a silicon NPN power transistor from On Semiconductor, designed for use in power amplifier and switching circuits. It offers excellent safe operating area limits and is complementary to the PNP 2N5194 and 2N5195 transistors.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 60V, a maximum collector current of 4A, and a maximum base current of 1A. The device can dissipate up to 40W at a case temperature of 25°C, with a thermal resistance junction-to-case of 3.12°C/W. The DC current gain (hFE) is a minimum of 25 at 1.5A collector current and 2V collector-emitter voltage. The saturation voltage (VCE(sat)) is a maximum of 1.4V at 1A base current and 4A collector current.
The transistor is housed in a TO-225AA (also known as TO-126-3) through-hole package, with a Pb-free finish. It is RoHS3 compliant and REACH unaffected. The operating junction temperature range is -65°C to 150°C. The device is ESD classified as HBM 3B and MM C.
Typical applications include power amplification stages, audio output stages, general-purpose switching, and linear power supplies. The 2N5191G is a 60V variant of the 2N519x series, with lower voltage (2N5190G, 40V) and higher voltage (2N5192G, 80V) alternatives available.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.40 | $1.40 |
| 10+ | $0.88 | $0.88 |
| 100+ | $0.59 | $0.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 60V.
The maximum collector current is 4A.
The maximum power dissipation is 40W at a case temperature of 25°C.
The operating junction temperature range is -65°C to 150°C.
It is available in a TO-225AA (TO-126-3) through-hole package.
Yes, it is RoHS3 compliant and Pb-free as stated in the datasheet.
The minimum DC current gain (hFE) is 25 at Ic=1.5A and Vce=2V.