2N5191 NPN silicon power transistor rated for 60V collector-emitter voltage, 4A collector current, and 40W power dissipation. Housed in a TO-225AA (TO-126) through-hole package.
Mfr Part #:

2N5191

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN silicon power transistor rated for 60V collector-emitter voltage, 4A collector current, and 40W power dissipation. Housed in a TO-225AA (TO-126) through-hole package.
Total Stock: 7 pcs
$ Price Range: $0.34 - $0.89

2N5191 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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7 pcs
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2N5191 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Base Current (IB)
Collector Cutoff Current (ICBO)
Collector Cutoff Current (ICEO)
Collector-Base Voltage (VCBO)
Collector-Emitter Sustaining Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Human Body Model
ESD Machine Model
Emitter Cutoff Current (Iebo)
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
icex (Maximum @ VCE=60 V, VEB(off)=1.5 V)
icex (Maximum @ VCE=60 V, VEB(off)=1.5 V, TC=125 °C)

2N5191 Description

Short technical summary and product information.

The 2N5191 is an NPN silicon power transistor from On Semiconductor designed for use in power amplifier and switching circuits. It offers excellent safe area limits and is the complement to PNP transistors 2N5194 and 2N5195.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 60V, collector current rating of 4A, and total device dissipation of 40W. The DC current gain (hFE) is a minimum of 25 at 1.5A collector current and 2V VCE, while the collector-emitter saturation voltage is 600mV maximum at 150mA base current and 1.5A collector current. The transition frequency is 2 MHz.

 

The device is available in a TO-225AA (TO-126-3) through-hole package with a junction-to-case thermal resistance of 3.12°C/W. It is rated for operating junction temperatures from -65°C to 150°C. The 2N5191 is Pb-Free and RoHS compliant.

2N5191 Quick Information

Product Type: NPN Power Transistor
Series: 2N5191
Canonical Name: 2N5191 NPN Silicon Power Transistor
Subcategory: NPN Power Transistor

2N5191 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

2N5191 Estimated Pricing

Qty Low High
1+ $0.89 $0.89
10+ $0.55 $0.55
100+ $0.36 $0.36
4,000+ $0.34 $0.34

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N5191 Features

  • NPN silicon power transistor rated 60V VCEO.
  • Collector current capability up to 4A.
  • Power dissipation of 40W at 25°C case.
  • DC current gain minimum 25 at 1.5A.
  • Pb-Free and RoHS compliant packaging.

2N5191 Applications

  • Power amplifier and switching circuits.
  • General purpose linear amplification.
  • Complementary use with PNP 2N5194/2N5195.

2N5191 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the 2N5191?

60V.

What package is the 2N5191 available in?

TO-225AA (also known as TO-126-3), through-hole mounting.

What is the operating temperature range of the 2N5191?

-65°C to 150°C (junction temperature).

Is the 2N5191 RoHS compliant?

Yes, the device is Pb-Free and RoHS compliant.

What is the maximum collector current (IC) of the 2N5191?

4A.

What is the total power dissipation of the 2N5191?

40W at 25°C case temperature.

What is the transition frequency (fT) of the 2N5191?

2 MHz.

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