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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,500 pcs
|
4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector Current | |
| Collector Cutoff Current (Maximum @ VCB = 40 V, IE = 0) | |
| Collector Cutoff Current (Maximum @ VCE = 40 V, VEB(off) = 1.5 V) | |
| Collector Cutoff Current (Maximum @ VCE=40 V, IB=0) | |
| Collector-Base Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (Minimum @ IC = 4.0 A, VCE = 2 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| ESD Human Body Model | |
| ESD Machine Model | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation | |
| SVHC Present | |
| Standard Package Quantity | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Thermal Resistance - Junction to Case | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N5190G from On Semiconductor is a silicon NPN power transistor suitable for power amplifier and switching applications. It offers a maximum collector-emitter voltage of 40V, collector current up to 4A, base current up to 1A, and total device power dissipation of 40W at a case temperature of 25°C. The device has a minimum DC current gain of 25 at 1.5A collector current and 2V VCE, and 10 at 4A. The VCE saturation voltage is typically 1.4V maximum at 1A base current and 4A collector current. Transition frequency is 2MHz. Operating junction temperature range extends from -65°C to 150°C. The transistor is housed in a TO-225AA (TO-126) through-hole package with radial leads and weighs approximately 1.5g. The standard package quantity is 500 units per box. The 2N5190G is RoHS3 compliant and Pb-Free. Complementary PNP parts are the 2N5194 and 2N5195. ESD classification is HBM class 3B and MM class C per JEDEC.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.40 | $1.40 |
| 10+ | $0.88 | $0.88 |
| 100+ | $0.59 | $0.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 40 Vdc.
The operating junction temperature range is -65°C to 150°C.
Yes, it is RoHS3 compliant and Pb-Free as stated in the datasheet.
The 2N5190G is available in a TO-225AA (TO-126) through-hole package.
The maximum collector current (IC) is 4.0 Adc.
Minimum hFE is 25 at IC=1.5A, VCE=2V and 10 at IC=4A, VCE=2V.
The complementary PNP transistors are the 2N5194 and 2N5195 from On Semiconductor.