2N5190G

The 2N5190G from On Semiconductor is a silicon NPN power transistor suitable for power amplifier and switching applications. It offers a maximum collector-emitter voltage of 40V, collector current up to 4A, base current up to 1A, and total device power dissipation of 40W at a case temperature of 25°C. The device has a minimum DC current gain of 25 at 1.5A collector current and 2V VCE, and 10 at 4A. The VCE saturation voltage is typically 1.4V maximum at 1A base current and 4A collector current. Transition frequency is 2MHz. Operating junction temperature range extends from -65°C to 150°C. The transistor is housed in a TO-225AA (TO-126) through-hole package with radial leads and weighs approximately 1.5g. The standard package quantity is 500 units per box. The 2N5190G is RoHS3 compliant and Pb-Free. Complementary PNP parts are the 2N5194 and 2N5195. ESD classification is HBM class 3B and MM class C per JEDEC.