2N5190G NPN silicon power transistor designed for power amplifier and switching circuits. Features 40V VCEO, 4A maximum collector current, and 40W power dissipation.
Mfr Part #:

2N5190G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN silicon power transistor designed for power amplifier and switching circuits. Features 40V VCEO, 4A maximum collector current, and 40W power dissipation.
Total Stock: 4,500 pcs
$ Price Range: $0.59 - $1.40

2N5190G Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,500 pcs
4500 pcs On Request 1 On Request On Request On Request On Request On Request

2N5190G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current
Collector Cutoff Current (Maximum @ VCB = 40 V, IE = 0)
Collector Cutoff Current (Maximum @ VCE = 40 V, VEB(off) = 1.5 V)
Collector Cutoff Current (Maximum @ VCE=40 V, IB=0)
Collector-Base Voltage
Collector-Emitter Voltage
Current
DC Current Gain (Minimum @ IC = 4.0 A, VCE = 2 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Human Body Model
ESD Machine Model
Emitter Cutoff Current
Emitter-Base Voltage
Frequency
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Power
Power Dissipation
SVHC Present
Standard Package Quantity
Supplier Device Package
Tape & Reel
Termination Style
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N5190G Description

Short technical summary and product information.

The 2N5190G from On Semiconductor is a silicon NPN power transistor suitable for power amplifier and switching applications. It offers a maximum collector-emitter voltage of 40V, collector current up to 4A, base current up to 1A, and total device power dissipation of 40W at a case temperature of 25°C. The device has a minimum DC current gain of 25 at 1.5A collector current and 2V VCE, and 10 at 4A. The VCE saturation voltage is typically 1.4V maximum at 1A base current and 4A collector current. Transition frequency is 2MHz. Operating junction temperature range extends from -65°C to 150°C. The transistor is housed in a TO-225AA (TO-126) through-hole package with radial leads and weighs approximately 1.5g. The standard package quantity is 500 units per box. The 2N5190G is RoHS3 compliant and Pb-Free. Complementary PNP parts are the 2N5194 and 2N5195. ESD classification is HBM class 3B and MM class C per JEDEC.

2N5190G Quick Information

Product Type: Bipolar (BJT) Single Transistor
Series: 2N5190
Canonical Name: On Semiconductor 2N5190G NPN Power Transistor, 40V VCEO, 4A IC, TO-126
Subcategory: NPN Power Transistor

2N5190G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N5190G Estimated Pricing

Qty Low High
1+ $1.40 $1.40
10+ $0.88 $0.88
100+ $0.59 $0.59

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N5190G Features

  • NPN silicon power transistor for amplifier/switching.
  • Maximum collector-emitter voltage 40 volts.
  • Continuous collector current rating 4 amperes.
  • Power dissipation up to 40 watts.
  • Through-hole TO-126 package with radial leads.

2N5190G Applications

  • Use in power amplifier circuits.
  • Suitable for switching applications.
  • Complemented by PNP types 2N5194/5.

2N5190G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2N5190G?

The maximum collector-emitter voltage (VCEO) is 40 Vdc.

What is the operating junction temperature range?

The operating junction temperature range is -65°C to 150°C.

Is the 2N5190G RoHS compliant?

Yes, it is RoHS3 compliant and Pb-Free as stated in the datasheet.

What package does the 2N5190G come in?

The 2N5190G is available in a TO-225AA (TO-126) through-hole package.

What is the maximum collector current?

The maximum collector current (IC) is 4.0 Adc.

What is the DC current gain (hFE) of the 2N5190G?

Minimum hFE is 25 at IC=1.5A, VCE=2V and 10 at IC=4A, VCE=2V.

What is the complementary PNP transistor for the 2N5190G?

The complementary PNP transistors are the 2N5194 and 2N5195 from On Semiconductor.

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