| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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685 pcs
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685 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Central Semiconductor Corp. 2N5179 is a silicon NPN RF transistor manufactured using the epitaxial planar process. It is specifically designed for applications in VHF/UHF frequency ranges, serving as an amplifier, oscillator, and converter.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 12V and a Continuous Collector Current (IC) of up to 50mA. The transistor exhibits a DC Current Gain (hFE) ranging from 25 to 250 and a Transition Frequency (fT) between 900 and 2000 MHz at specified test conditions.
This transistor is housed in a TO-72 case, suitable for through-hole mounting. Maximum power dissipation is rated at 200mW at 25°C ambient temperature, with an option for 300mW when measured at the case temperature (TC=25°C). The operating and storage junction temperature range is -65°C to +200°C.
Applications for the 2N5179 include VHF/UHF amplification, oscillation, and frequency conversion circuits where its RF performance characteristics are beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector-Emitter Voltage (VCEO) for the 2N5179 is a maximum of 12V.
The maximum Continuous Collector Current (IC) for the 2N5179 is 50mA.
The Transition Frequency (fT) of the 2N5179 ranges from 900 to 2000 MHz under test conditions of VCE=6.0V, IC=5.0mA, at f=100MHz.
The 2N5179 is available in a TO-72 case.
The RoHS status of the 2N5179 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2N5179 is 1 Unlimited.
The REACH status for the 2N5179 is REACH Unaffected.