Mfr Part #:

2N5157

The STC MICROWAVE 2N5157 is an NPN High Power Silicon Transistor designed for demanding applications. It offers robust electrical characteristics and a wide operating temperature range.

✓ Total Stock: 113 pcs

$ Price Range: $1.84

2N5157 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Partservice ✓ Non-Authorised Inventory information	113 pcs On Request	113 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

2N5157 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	STC Microwave
Mounting Type	Through Hole
Turn Off Time	1.7 μs
Turn On Time	0.8 μs

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2N5157 Description

Short technical summary and product information.

The 2N5157 from STC MICROWAVE is a high-power NPN silicon transistor designed for robust performance. It features a maximum Collector-Emitter Voltage (V CEO) of up to 500 Vdc and a continuous Collector Current (I C) of 3.5 Adc, making it suitable for power switching and amplification tasks.

This transistor operates within a wide temperature range of -65 to +200 °C, ensuring reliability in various environmental conditions. Key electrical characteristics include a maximum Base Current (I B) of 2.0 Adc and a maximum Total Power Dissipation (P T) of 100 W at 25°C case temperature. The device is housed in a TO-3 (TO-204AA) package, typically requiring through-hole mounting.

With its high power handling capabilities and broad operating parameters, the 2N5157 is a versatile component for power electronics designs. Its specifications support applications requiring significant voltage and current handling.

2N5157 Quick Information

Product Type: NPN Transistor

Canonical Name: 2N5157 NPN High Power Silicon Transistor

Subcategory: JFETs

2N5157 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

2N5157 Estimated Pricing

Qty	Low	High
1+	$1.84	$1.84

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N5157 Features

High power NPN silicon transistor.
Up to 500 Vdc collector-emitter voltage.
Continuous collector current of 3.5 Adc.
Wide operating temperature range.
TO-3 (TO-204AA) package.

2N5157 Applications

Suitable for high-power switching applications.
Used in power amplifier circuits.
Ideal for high-voltage switching environments.
Applicable in motor control and regulation.
Suitable for high-temperature operation environments.

2N5157 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage for the 2N5157?

The maximum collector-emitter voltage (V CEO) for the 2N5157 is 500 Vdc.

What is the maximum continuous collector current for the 2N5157?

The maximum continuous collector current (I C) for the 2N5157 is 3.5 Adc.

What is the operating temperature range of the 2N5157?

The operating and storage temperature range for the 2N5157 is -65 to +200 °C.

What is the package type for the 2N5157 transistor?

The 2N5157 transistor comes in a TO-3 (TO-204AA) package.

What is the RoHS status of the 2N5157?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the 2N5157?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.