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2N5157 The Vishay Dale 2N5157 is an NPN High Power Silicon Transistor in a TO-3 package. It offers a VCEO of 400V and an IC of 3.5A.
Mfr Part #:

2N5157

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale 2N5157 is an NPN High Power Silicon Transistor in a TO-3 package. It offers a VCEO of 400V and an IC of 3.5A.
✓ Total Stock: 3 pcs
$ Price Range: $0.09

2N5157 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
3 pcs
On Request
3 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

2N5157 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
SVHC Present
Turn Off Time
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2N5157 Description

Short technical summary and product information.

The Vishay Dale 2N5157 is a high power NPN bipolar junction transistor (BJT) designed for demanding applications. It comes in a TO-3 (TO-204AA) package, suitable for through-hole mounting.

 

Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 400V, a Collector Current (IC) of up to 3.5A, and a Base Current (IB) of 2.0A. The transistor exhibits a maximum Base-Emitter Saturation Voltage (VBE(sat)) of 1.5V at 1.0A base current and a maximum Collector-Emitter Saturation Voltage (VCE(sat)) of 0.8V at 1.0A collector current and 0.1A base current.

 

With a maximum power dissipation of 5.0W at 25°C ambient temperature (derated linearly), and 100W at 25°C case temperature, the 2N5157 is built for robust performance. The operating and storage temperature range is from -65°C to +200°C.

 

This transistor is available in JAN, JANTX, and JANTXV specifications per MIL-PRF-19500/371, indicating its suitability for military and high-reliability applications. Its thermal resistance from junction to case is 1.25°C/W.

2N5157 Quick Information

Product Type: Bipolar Transistor
Canonical Name: 2N5157 NPN High Power Silicon Transistor
Subcategory: Single

2N5157 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N5157 Estimated Pricing

Qty Low High
1+ $0.09 $0.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N5157 Features

  • NPN High Power Silicon Transistor.
  • 400V Collector-Emitter Voltage (VCEO).
  • 3.5A Continuous Collector Current (IC).
  • TO-3 (TO-204AA) package for through-hole mounting.
  • Available in JAN, JANTX, JANTXV specifications.

2N5157 Applications

  • High power switching applications.
  • Linear power amplification.
  • Military and high-reliability systems.
  • General purpose high voltage use.

2N5157 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2N5157?

400 Vdc.

What is the maximum collector current?

3.5 Adc.

What is the power dissipation rating?

100 W at case temperature 25°C, derate above 75°C.

What is the operating temperature range?

-65 to +200 °C.

What package is the 2N5157 available in?

TO-3 (TO-204AA).

What is the DC current gain (hFE) at 1A?

30 to 90 at IC=1A, VCE=5V.

What are the switching times?

Turn-on time 0.8 µs, turn-off time 1.7 µs.

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