DistyParts Icon
2N5116 P-Channel JFET with 30V drain-source voltage and 500mW power dissipation in a TO-18 through-hole package.
Mfr Part #:

2N5116

Available from 1 distributors
Mfr Name: Solid State Devices Inc (SSDI)
Solid State Devices Inc (SSDI)
P-Channel JFET with 30V drain-source voltage and 500mW power dissipation in a TO-18 through-hole package.
✓ Total Stock: 5,750 pcs

2N5116 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
5,750 pcs
On Request
5750 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

2N5116 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Power
Resistance
Storage Temperature
Supplier Device Package
Tape & Reel
Turn Off Time
Turn On Time
Voltage
View Similar Products (0)

2N5116 Description

Short technical summary and product information.

The 2N5116 is a silicon P-Channel JFET designed for switching applications. It features a maximum drain-source voltage of 30V, gate-source voltage of 30V, and gate current of 50mA. Power dissipation is rated at 500mW, with an operating and storage junction temperature range of -65°C to 200°C.

 

Electrical characteristics include a drain current (IDSS) of 5.0 mA to 25 mA at VDS=15V, gate-source cutoff voltage of 1.0V to 4.0V, and maximum drain-source on-resistance of 150Ω. Input capacitance is 25pF maximum, and reverse transfer capacitance is 7.0pF maximum. Switching times are 42ns turn-on and 60ns turn-off under specified test conditions.

 

The device is housed in a TO-206AA / TO-18-3 metal can package with through-hole mounting. Lead configuration is Source, Gate, Drain. This JFET is suitable for low-power analog switching and signal gating applications.

2N5116 Quick Information

Product Type: P-Channel JFET
Canonical Name: 2N5116 P-Channel JFET
Subcategory: P-Channel JFET

2N5116 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N5116 Features

  • P-Channel JFET for switching applications.
  • Maximum drain-source voltage of 30V.
  • Power dissipation rated at 500mW.
  • Through-hole TO-18 metal can package.
  • Fast switching with 42ns turn-on time.

2N5116 Applications

  • Used in analog switching circuits.
  • Suitable for low-noise amplifier stages.
  • Ideal for signal gating applications.
  • Employed in voltage-controlled resistor circuits.

2N5116 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the 2N5116?

The maximum drain-source voltage (VDS) is 30V.

What package is the 2N5116 available in?

The 2N5116 is available in a TO-206AA / TO-18-3 metal can through-hole package (supplier device package TO-18).

What is the operating temperature range of the 2N5116?

The operating and storage junction temperature range is -65°C to 200°C.

Is the 2N5116 RoHS compliant?

The 2N5116 is listed as RoHS3 Compliant, but this information is unverified and has low confidence.

What is the drain current range of the 2N5116?

The drain current (IDSS) at VDS=15V ranges from 5.0 mA to 25 mA.

What is the maximum drain-source on-resistance?

The maximum drain-source on-resistance (rDS(ON)) is 150Ω at ID=1mA, VGS=0.

What are the switching times of the 2N5116?

Turn-on time is 42 ns maximum and turn-off time is 60 ns maximum under specified test conditions.

Home
Account

Categories