| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Resistance | |
| Supplier Device Package | |
| Tape & Reel | |
| Voltage |
The 2N5115 is a P-Channel JFET (Junction Field-Effect Transistor) manufactured by Microchip Technology. It is designed for general-purpose switching and amplification applications requiring a P-Channel device.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 30V, a drain current of 60mA at VDS=15V, and a maximum drain-to-source resistance of 100Ω. The device features a maximum input capacitance of 25pF at Vds=15V, making it suitable for low-frequency applications. Power dissipation is rated at 500mW.
The 2N5115 is housed in a TO-206AA (TO-18-3 Metal Can) package with through-hole mounting. It can operate over a junction temperature range of -65°C to 200°C. The device is offered as RoHS3 compliant and has an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 100+ | $41.52 | $41.52 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30V.
The drain current is 60mA at VDS=15V.
The 2N5115 is available in a TO-206AA, TO-18-3 Metal Can package (through-hole).
The operating junction temperature range is -65°C to 200°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified.