| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,245 pcs
|
5245 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
39 pcs
|
39 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Resistance | |
| Supplier Device Package | |
| Tape & Reel | |
| Voltage |
The 2N5114 is a P-Channel JFET from Microchip Technology designed for switching and amplification applications. It features a drain-to-source voltage rating of 30V and a maximum drain current of 90mA at 18V. The device has a maximum on-resistance of 75Ω and an input capacitance of 25pF at 15V Vds.
With a maximum power dissipation of 500mW, it operates over a junction temperature range of -65°C to 200°C. The JFET is packaged in a TO-206AA (TO-18-3 Metal Can) through-hole package, suitable for traditional assembly processes.
Its electrical characteristics make it appropriate for low-power analog circuits requiring high input impedance. The 75Ω on-resistance and low capacitance support use in switching and signal routing applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $37.71 | $37.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
90mA.
75Ω.
TO-206AA (TO-18-3 Metal Can) through-hole.
-65°C to 200°C junction temperature.
RoHS3 compliant (unverified).
500mW.