LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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| On Request | On Request | 3 | On Request | On Request | On Request | On Request | On Request |
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The 2N5109 is a silicon NPN transistor housed in a TO-39 package, specifically engineered for broadband applications demanding good linearity. It is suitable for use as a high-frequency current mode switch up to 200mA.
Key electrical specifications include a collector-emitter voltage (VCEO) of 20V and a continuous collector current (IC) of 400mA. The transistor features a current-gain bandwidth product (fT) of 1.2GHz at 50mA and a typical unilateral gain (GUM) of 12dB at 200MHz. The DC current gain (hFE) is a minimum of 40 at 50mA and 15V.
With a maximum power dissipation (PD) of 2.5W at 75°C, the 2N5109 is designed for RF and microwave discrete low-power transistor applications. It operates within a temperature range of -65°C to 200°C.
This transistor is mounted through-hole in a TO-205AD, TO-39-3 Metal Can package. It is also listed with RoHS3 compliance and an MSL of 1 Unlimited.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the 2N5109 transistor is 20V.
The maximum continuous collector current (IC) for the 2N5109 is 400mA.
The current-gain bandwidth product (fT) of the 2N5109 transistor is 1.2GHz at 50mA.
The 2N5109 transistor is supplied in a TO-205AD, TO-39-3 Metal Can package.
The 2N5109 transistor has a minimum operating temperature of -65°C and a maximum operating temperature of 200°C.
