DistyParts Icon
2N5109 RF NPN transistor with 20V collector-emitter breakdown voltage, 400mA collector current, and 1.2GHz transition frequency. Housed in a TO-39 (TO-205AD) metal can package.
Mfr Part #:

2N5109

Available from 1 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
RF NPN transistor with 20V collector-emitter breakdown voltage, 400mA collector current, and 1.2GHz transition frequency. Housed in a TO-39 (TO-205AD) metal can package.
✓ Total Stock: 4,000 pcs
$ Price Range: $4.45

2N5109 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
4,000 pcs
On Request
4000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

2N5109 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Power
Supplier Device Package
Transistor Type
Voltage
View Similar Products (0)

2N5109 Description

Short technical summary and product information.

The 2N5109 is an NPN RF bipolar junction transistor from Microsemi Corporation. It features a collector-emitter breakdown voltage of 20V, a maximum collector current of 400mA, and a power dissipation of 2.5W. The transistor offers a transition frequency of 1.2GHz, a gain of 12dB, and a minimum DC current gain (hFE) of 40 at Ic=50mA and Vce=15V.

 

This device is designed for through-hole mounting and comes in a TO-39 (TO-205AD) metal can package. It is suitable for RF amplification and oscillator circuits up to 1.2GHz. The 2N5109 is listed as RoHS3 compliant, MSL 1 unlimited, and REACH unaffected, though these compliance statuses are unverified.

 

Typical applications include RF driver stages, communication equipment, and other high-frequency signal processing circuits. The combination of moderate voltage, current, and high transition frequency makes it a versatile choice for legacy and new designs where a TO-39 package is preferred.

2N5109 Quick Information

Product Type: RF Bipolar Junction Transistor (BJT)
Canonical Name: RF Transistor NPN 20V 1.2GHz Through Hole TO-39
Subcategory: RF Transistor

2N5109 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N5109 Estimated Pricing

Qty Low High
1,000+ $4.45 $4.45

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N5109 Features

  • NPN RF transistor with 20V breakdown voltage.
  • 400mA collector current capability.
  • 1.2GHz transition frequency.
  • Through-hole TO-39 metal can package.
  • RoHS3 compliant listed.

2N5109 Applications

  • Ideal for RF amplification up to 1.2GHz.
  • Used in oscillator circuits.
  • Suitable for communication equipment.
  • Can be used in driver stages.

2N5109 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the 2N5109?

20 V.

What package is the 2N5109 available in?

TO-39 (TO-205AD) metal can, through-hole mounting.

Is the 2N5109 RoHS compliant?

It is listed as RoHS3 compliant, but this status is unverified.

What is the transition frequency of the 2N5109?

1.2 GHz.

What is the maximum collector current?

400 mA.

What is the power dissipation?

2.5 W.

What is the DC current gain (hFE)?

Minimum 40 at Ic=50mA, Vce=15V.

Home
Account

Categories