2N5089 NPN silicon amplifier transistor with 25V collector-emitter breakdown voltage, 50mA continuous collector current, and minimum DC current gain of 400. Housed in a TO-92 through-hole package.
Mfr Part #:

2N5089

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN silicon amplifier transistor with 25V collector-emitter breakdown voltage, 50mA continuous collector current, and minimum DC current gain of 400. Housed in a TO-92 through-hole package.
Total Stock: 52,000 pcs
$ Price Range: $0.03

2N5089 Available from 1 distributor

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2N5089 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Cutoff Current (ICBO)
Collector-Base Breakdown Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current (Iebo)
Emitter-Base Voltage
Frequency
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ TC=25 °C)
Standard Package Qty
Storage Temperature
Supplier Device Package
Tape & Reel
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N5089 Description

Short technical summary and product information.

The 2N5089 is an NPN silicon amplifier transistor designed for general-purpose amplification and switching applications. It features a collector-emitter breakdown voltage of 25V (minimum) and a continuous collector current rating of 50mA. The device offers a high DC current gain (hFE) of 400 minimum at 100µA collector current, making it suitable for low-level signal amplification. With a transition frequency of 50MHz, it can handle moderate frequency signals. The transistor is capable of dissipating up to 625mW at 25°C ambient temperature, with a junction-to-ambient thermal resistance of 200°C/W. It is available in a TO-92 (TO-226) through-hole package, which is widely used for prototyping and low-power designs. The operating junction temperature range spans from -55°C to 150°C, ensuring reliability in various environments. ON Semiconductor offers Pb-free package options for this device.

2N5089 Quick Information

Product Type: Bipolar Transistor (BJT)
Canonical Name: 2N5089 NPN Amplifier Transistor
Subcategory: NPN

2N5089 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Pb-Free Packages Available

2N5089 Estimated Pricing

Qty Low High
20,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N5089 Features

  • NPN silicon amplifier transistor.
  • 25V collector-emitter breakdown voltage.
  • 50mA continuous collector current.
  • Minimum DC current gain of 400.
  • TO-92 through-hole package.

2N5089 Applications

  • General-purpose low-power amplification.
  • Signal processing in audio circuits.
  • Driver stages for small loads.
  • Switching applications up to 50mA.

2N5089 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the 2N5089?

The minimum collector-emitter breakdown voltage (VCEO) is 25V at Ic=1mA, Ib=0.

What package is the 2N5089 available in?

The 2N5089 is available in a TO-226-3, TO-92-3 Long Body through-hole package, also referred to as TO-92 (TO-226).

What is the operating temperature range of the 2N5089?

The operating junction temperature range is -55°C to 150°C.

Is the 2N5089 RoHS compliant?

The 2N5089 is listed as RoHS3 compliant, and Pb-free packages are available. However, this compliance status is unverified and should be confirmed with the manufacturer.

What is the DC current gain (hFE) of the 2N5089?

The minimum DC current gain is 400 at Ic=100µA, Vce=5V.

What is the transition frequency of the 2N5089?

The transition frequency (ft) is 50MHz.

What is the maximum collector current?

The maximum continuous collector current is 50mA.

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