| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,568 pcs
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2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N5088 is an NPN silicon amplifier transistor manufactured by On Semiconductor. It is designed for general-purpose amplification and switching applications requiring high gain. Key electrical ratings include a maximum collector-emitter voltage of 30V, a maximum collector current of 50mA, and a power dissipation of 625mW at 25°C ambient.
The transistor offers a high DC current gain (hFE) of 300 minimum at 100µA collector current and 350 minimum at 1mA, making it suitable for low-level signal amplification. The transition frequency is 50 MHz, enabling use in audio and low-frequency RF circuits. The collector-base voltage is rated at 35V minimum, and emitter-base voltage at 3V maximum.
The 2N5088 is housed in a TO-92 (TO-226) through-hole package, which is widely used for discrete transistors. The operating junction temperature range is -55°C to 150°C. The device is available in Pb-free options as indicated in the datasheet. Thermal resistance is 200°C/W junction-to-ambient and 83.3°C/W junction-to-case.
30V.
50 mA.
Minimum 300 at 100µA, 5V; minimum 350 at 1mA, 5V.
TO-92 (TO-226) through-hole.
-55°C to 150°C.
The datasheet indicates Pb-free packages are available, but RoHS status is unverified.
50 MHz.