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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,780 pcs
|
1780 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N5087TFR is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose amplification and switching applications.
Key electrical specifications include a collector-emitter voltage (Vce) of 50V, a collector current (Ic) rating of 100mA, and a power dissipation of 625mW. The device offers a minimum DC current gain (hFE) of 250 at a test condition of Ic=100µA and Vce=5V. The maximum collector-emitter saturation voltage (Vce(sat)) is 300mV at Ib=1mA and Ic=10mA. The transition frequency (ft) is 40MHz.
The transistor is housed in a through-hole TO-226-3, TO-92-3 (TO-226AA) package with formed leads, suitable for manual and automated insertion on printed circuit boards. The operating junction temperature range is -55°C to 150°C.
The collector-emitter voltage (Vce) is 50V.
The maximum collector current (Ic) is 100mA.
The power dissipation is 625mW.
The package is TO-226-3, TO-92-3 (TO-226AA) with formed leads, and the supplier device package is TO-92-3.
The operating junction temperature range is -55°C to 150°C.
The minimum DC current gain (hFE) is 250 at Ic=100µA and Vce=5V.
The transition frequency is 40MHz.