2N5087TFR 2N5087TFR is a PNP bipolar junction transistor from On Semiconductor. It features a 50V collector-emitter voltage rating, 100mA collector current, and 625mW power dissipation in a through-hole TO-92-3 package.
Mfr Part #:

2N5087TFR

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
2N5087TFR is a PNP bipolar junction transistor from On Semiconductor. It features a 50V collector-emitter voltage rating, 100mA collector current, and 625mW power dissipation in a through-hole TO-92-3 package.
Total Stock: 1,780 pcs

2N5087TFR Available from 1 distributor

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2N5087TFR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N5087TFR Description

Short technical summary and product information.

The 2N5087TFR is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose amplification and switching applications.

 

Key electrical specifications include a collector-emitter voltage (Vce) of 50V, a collector current (Ic) rating of 100mA, and a power dissipation of 625mW. The device offers a minimum DC current gain (hFE) of 250 at a test condition of Ic=100µA and Vce=5V. The maximum collector-emitter saturation voltage (Vce(sat)) is 300mV at Ib=1mA and Ic=10mA. The transition frequency (ft) is 40MHz.

 

The transistor is housed in a through-hole TO-226-3, TO-92-3 (TO-226AA) package with formed leads, suitable for manual and automated insertion on printed circuit boards. The operating junction temperature range is -55°C to 150°C.

2N5087TFR Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2N5087TFR PNP Bipolar Transistor
Subcategory: Single PNP

2N5087TFR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N5087TFR Features

  • PNP bipolar junction transistor design.
  • Rated for 50V collector-emitter voltage.
  • Supports 100mA continuous collector current.
  • Dissipates up to 625mW of power.
  • Through-hole TO-92-3 package with formed leads.

2N5087TFR Applications

  • Used in general-purpose signal amplification.
  • Suitable for low-frequency switching circuits.
  • Ideal for audio preamplifier stages.
  • Applicable in driver and interface circuits.

2N5087TFR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the 2N5087TFR?

The collector-emitter voltage (Vce) is 50V.

What is the maximum collector current for the 2N5087TFR?

The maximum collector current (Ic) is 100mA.

What is the power dissipation of the 2N5087TFR?

The power dissipation is 625mW.

What is the package type for the 2N5087TFR?

The package is TO-226-3, TO-92-3 (TO-226AA) with formed leads, and the supplier device package is TO-92-3.

What is the operating temperature range for the 2N5087TFR?

The operating junction temperature range is -55°C to 150°C.

What is the DC current gain (hFE) of the 2N5087TFR?

The minimum DC current gain (hFE) is 250 at Ic=100µA and Vce=5V.

What is the transition frequency of the 2N5087TFR?

The transition frequency is 40MHz.

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