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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N5067 is an NPN silicon power transistor manufactured by RF, utilizing an epitaxial base process. It is designed for versatile general-purpose switching and power amplifier applications.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 5A. The transistor can handle a peak collector current (ICM) of 10A and a base current (IB) of 1A. Its collector power dissipation (PC) is rated at 87.5W at a case temperature of 25°C.
This series, including the 2N5067, 2N5068, and 2N5069, is complementary to the PNP series 2N4901, 2N4902, and 2N4903. The 2N5067 is the lower voltage option within its series, suitable for applications where high voltages are not a primary requirement but significant power handling is needed.
The transistor is housed in a TO-3 package, which is suitable for through-hole mounting. Its thermal resistance from junction to case is 2.0°C/W, and it has a maximum junction temperature of 150°C and a storage temperature range of -65°C to 200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.71 | $2.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N5067 is 40V.
The continuous collector current (IC) rating for the 2N5067 is 5A.
The 2N5067 transistor comes in a TO-3 package.
The maximum power dissipation (PC) for the 2N5067 at 25°C is 87.5W.
The DC current gain (hFE) of the 2N5067 at IC=1A and VCE=2V ranges from 20 to 80.
The 2N5067 is designed for general-purpose switching and power amplifier applications.