| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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38 pcs
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38 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| SVHC Present |
The 2N5059 from Texas Instruments is a general-purpose NPN silicon bipolar junction transistor (BJT). It is housed in a TO-39 (TO-205AD) package, suitable for through-hole mounting.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 300V and a maximum collector-base voltage (VCBO) of 300V. The emitter-base voltage (VEBO) has a maximum rating of 7.0V, and it can handle a continuous collector current (IC) of up to 150mA.
Thermal considerations include a total device dissipation of 1.0W at 25°C ambient temperature, with derating above this temperature. The operating and storage junction temperature range is from -65°C to a maximum value not specified but implied by the derating.
This transistor is suitable for various general-purpose amplification and switching applications where its voltage and current ratings are appropriate.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 300V.
The maximum collector-base voltage (VCBO) is 300V.
The maximum emitter-base voltage (VEBO) is 7.0V.
The maximum continuous collector current (IC) is 150mA.
Power dissipation is 1.0W at ambient temperature 25°C and 5.0W at case temperature 25°C, with derating above 25°C.
The 2N5059 is housed in a TO-39 package.
The minimum operating and storage junction temperature is -65°C.
