LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics 2N5059 is a general-purpose NPN silicon bipolar junction transistor (BJT). It is designed for various electronic applications requiring reliable switching and amplification. Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 300V, a maximum collector-base voltage (VCBO) of 300V, and a maximum emitter-base voltage (VEBO) of 7.0V. The device can handle a continuous collector current (IC) of up to 150mA.
This transistor is housed in a TO-39 (TO-205AD) package, suitable for through-hole mounting. The maximum power dissipation (PD) is rated at 1.0W at an ambient temperature of 25°C, with derating above this temperature. The operating and storage junction temperature range is from -65°C to a specified maximum, ensuring operation across a wide thermal spectrum.
The 2N5059 is specified with RoHS3 compliance and a Moisture Sensitivity Level (MSL) of 1, indicating it is suitable for general industrial and commercial applications where robust performance and standard environmental considerations are necessary.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
300V.
150mA.
1.0W at ambient temperature 25°C and 5.0W at case temperature 25°C.
7.0V.
TO-39 (TO-205AD).
Through Hole.
