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The 2N5039 is a NPN silicon power transistor from WESTINGHOUSE, designed for power switching and amplification applications. It features a maximum collector-emitter voltage (VCEO) of 140V and a continuous collector current (IC) of up to 10A, making it suitable for handling significant power loads.
Key electrical characteristics include a low collector-emitter saturation voltage (VCEsat) of 2.5V at 2A and 5V at 10A, and a base-emitter saturation voltage (VBEsat) of 3.3V at 10A. The transistor also has a sustained collector-emitter voltage (VCEO(SUS)) of 90V.
This transistor is designed for robust performance, with various voltage and current ratings specified under different conditions, including non-repetitive peak collector current handling. Its specifications suggest suitability for applications requiring reliable power handling and amplification.
While specific packaging and mounting details are not provided in the available data, power transistors like the 2N5039 are typically housed in packages designed for heat dissipation and robust electrical connections.
| Qty | Low | High |
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| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCE) for the 2N5039 transistor is 140V.
The 2N5039 transistor can handle a maximum continuous collector current (IC) of 10A.
The collector-emitter saturation voltage (VCEsat) for the 2N5039 at 10A is 5V.
The RoHS status of the 2N5039 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2N5039 is Level 1.