2N5038G NPN silicon power transistor, 90V VCEO maximum, 20A continuous collector current, 140W power dissipation, in a TO-204 (TO-3) through-hole package.
Mfr Part #:

2N5038G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN silicon power transistor, 90V VCEO maximum, 20A continuous collector current, 140W power dissipation, in a TO-204 (TO-3) through-hole package.
Total Stock: 3,566 pcs
$ Price Range: $7.48

2N5038G Available from 1 distributor

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2N5038G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current - Continuous
Collector Current - Peak
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Derating Factor
Emitter-Base Voltage (VEBO)
Medical Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N5038G Description

Short technical summary and product information.

The 2N5038G is an NPN silicon power transistor manufactured by ON Semiconductor. Designed for high current and fast switching applications, it features a maximum collector-emitter voltage (VCEO) of 90 V and a continuous collector current rating of 20 A (30 A peak). The device dissipates up to 140 W at a case temperature of 25°C, with a derating factor of 0.8 W/°C above 25°C.

 

The transistor offers a minimum DC current gain (hFE) of 20 at 12 A collector current and a maximum collector-emitter saturation voltage (VCE(sat)) of 2.5 V at 20 A collector current. It is housed in a TO-204AA (TO-3) through-hole metal package, providing robust thermal performance with a junction-to-case thermal resistance of 1.25 °C/W. The operating junction temperature range spans from -65°C to +200°C.

 

Typical applications include switching regulators, inverters, wide-band amplifiers, and power oscillators in industrial and commercial equipment. The part is available with a Pb-Free finish (denoted by the G suffix) and is RoHS3 compliant.

2N5038G Quick Information

Product Type: Bipolar Junction Transistor
Series: 2N5038
Canonical Name: 2N5038G NPN Silicon Power Transistor
Subcategory: Single BJT

2N5038G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N5038G Estimated Pricing

Qty Low High
40+ $7.48 $7.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N5038G Features

  • NPN silicon power transistor design.
  • 90V maximum collector-emitter voltage.
  • 20A continuous collector current rating.
  • 140W power dissipation at case temperature.
  • TO-204 (TO-3) through-hole package.

2N5038G Applications

  • Used in switching regulator circuits.
  • Suitable for power inverters.
  • Drives wide-band power amplifiers.
  • Applies in power oscillators.

2N5038G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2N5038G?

The maximum collector-emitter voltage (VCEO) is 90 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) is 20 Adc, with a peak rating of 30 A under pulse conditions.

What package does the 2N5038G come in?

It is available in a TO-204AA (TO-3) through-hole package.

What is the operating temperature range?

The operating junction temperature range is -65°C to +200°C.

What is the power dissipation rating?

The maximum total device dissipation at case temperature 25°C is 140 W, derating at 0.8 W/°C above 25°C.

Is the 2N5038G RoHS compliant?

Our data shows RoHS3 compliant, but this is unverified.

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain (hFE) is 20 at Ic = 12 A and Vce = 5 V.

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