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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N5038 is an NPN silicon transistor designed for industrial and commercial applications requiring fast switching speeds and high current capacity. It is well-suited for use in switching regulators, inverters, wide-band amplifiers, and power oscillators.
Key electrical specifications include a collector-emitter voltage (VCEO) of 90V, a continuous collector current (IC) of 20A, and a peak collector current (ICM) of 30A. The device can handle a total power dissipation of 140W at 25°C case temperature.
This transistor features a low saturation voltage (VCE(sat)) of 2.5V maximum at 20A, contributing to efficient power handling. The operating and storage junction temperature range is -65°C to +200°C. The component is available in a TO-204AA (TO-3) package, typically mounted through-hole.
The 2N5038 is noted for its high speed with a typical fall time (tf) of 0.5 µs. It also offers a high current capacity, making it a robust choice for demanding power applications.
| Qty | Low | High |
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N5038 is 90 Vdc.
The 2N5038 transistor has a continuous collector current (IC) rating of 20 Adc.
The total device dissipation (PD) for the 2N5038 at a case temperature of 25°C is 140 W.
The operating and storage junction temperature range for the 2N5038 is -65°C to +200°C.
The 2N5038 is available in a TO-204AA (TO-3) package.
The RoHS status for the 2N5038 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2N5038 is 1 Unlimited.