2N5038

The 2N5038 from NTE Electronics is an NPN high-power silicon bipolar junction transistor (BJT) housed in a TO-3 through-hole package. It is designed for high-current and high-voltage applications, including industrial power switching, linear amplifiers, and motor control circuits.

The device features a maximum collector-emitter voltage of 90 V and a maximum collector current of 20 A. Power dissipation is rated at 140 W at a case temperature of 25°C. The DC current gain (hFE) is 50 to 200 at a collector current of 2 A and collector-emitter voltage of 5 V, and the collector-emitter saturation voltage is 2.5 V maximum at 20 A. The transition frequency is 60 MHz, and the operating junction temperature range is -65°C to +200°C.

The TO-3 package provides a large metal base for efficient heat transfer. Thermal resistance from junction to case is 1.25°C/W. Designers should use an adequate heat sink to maintain junction temperature within limits.

This part is suitable for linear output stages, high-current switching regulators, and automotive or industrial actuators where reliable handling of high power is required. Its through-hole mounting supports traditional PCB assembly methods.