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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N5011 is an NPN silicon bipolar junction transistor manufactured by Microsemi Corporation. It is designed for through-hole mounting in a TO-205AA / TO-5-3 metal can package, with a supplier device package of TO-5AA.
Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 600V, a collector current (Ic) rating of 200mA, and a power dissipation of 1W. The DC current gain (hFE) is a minimum of 30 at 25mA collector current and 10V Vce. The maximum Vce saturation voltage is 1.5V at a base current of 5mA and collector current of 25mA.
The device operates over a junction temperature range of -65°C to 200°C. It is suitable for general-purpose switching and amplification applications requiring high voltage capability in a compact metal can package.
| Qty | Low | High |
|---|---|---|
| 100+ | $22.48 | $22.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (Vceo) is 600V.
The collector current (Ic) is 200 mA.
The 2N5011 is available in a TO-205AA / TO-5-3 metal can package (supplier device package TO-5AA) for through-hole mounting.
The operating junction temperature range is -65°C to 200°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified low-confidence data.
The minimum DC current gain (hFE) is 30 at Ic=25mA and Vce=10V.
The power dissipation is 1 W.