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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SIG 2N5003 is a PNP silicon power bipolar junction transistor (BJT) designed for high-speed power switching applications. It is housed in a TO-59 stud-mount package.
This transistor is rated for a maximum collector-emitter breakdown voltage of 80V and a continuous collector current of 5A, with a maximum power dissipation of 2W. It is military qualified up to the JANTXV level per MIL-PRF-19500, 512 and 535 standards.
The TO-59 isolated package is available with a 180-degree lead orientation. The 2N5003 is also available in chip form using the 9702 chip geometry. This component is suitable for applications requiring reliable high-speed power switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N5003 transistor has a maximum collector-emitter breakdown voltage of 80V.
The 2N5003 transistor can handle a continuous collector current of up to 5A.
The maximum power dissipation for the 2N5003 transistor is 2W.
The 2N5003 transistor is supplied in a TO-59 stud-mount package.
The 2N5003 transistor is military qualified up to the JAN - JANTXV level.