| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Power Dissipation | |
| Storage Temperature |
The SESCOCEM 2N4957 is a general-purpose PNP silicon transistor designed for applications such as VHF-UHF amplification. It features a hermetically sealed TO-72 metal can package.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 30V, a maximum collector-base voltage (VCBO) of 30V, and a maximum emitter-base voltage (VEBO) of 3V. The continuous collector current (IC) is rated at 30mA, with a maximum power dissipation of 200mW at 25°C, derated linearly above that temperature.
This transistor operates within a junction temperature range of -65°C to +200°C and a storage temperature range of -65°C to +200°C. It is available in a chip configuration as well, with a chip geometry of 0006. The part is referenced under MIL-PRF-19500/426 and offers qualification levels including JAN, JANTX, JANTXV, JANS, JANSR, and JANSF.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N4957 transistor is 30V.
The continuous collector current (IC) for the 2N4957 transistor is 30mA.
The 2N4957 transistor is supplied in a hermetically sealed TO-72 metal can package.
The operating junction temperature and storage temperature range for the 2N4957 are both -65°C to +200°C.