0402N680F500CG
Walsin Technology
The Walsin Technology 0402N680F500CG is a ceramic capacitor. It features RoHS3 compliance and MSL Level 1.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
24 pcs
|
24 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The CRYSTALONICS 2N4929 is a general purpose transistor designed for various electronic applications. This component is manufactured by CRYSTALONICS and falls under the category of discrete semiconductor products, specifically programmable unijunction transistors.
Key electrical specifications include a maximum collector current of 50mA and a maximum power dissipation of 1W. The device can operate at temperatures up to 175°C. It is noted as RoHS3 Compliant, with an MSL rating of 1 and REACH Unaffected status.
While specific details like collector-emitter voltage and detailed gain characteristics are not provided in the available data, the 2N4929 serves as a general-purpose transistor. Its specifications suggest suitability for applications requiring moderate current handling and power dissipation within a wide operating temperature range.
Further information regarding package type, mounting, and precise electrical parameters would typically be found in the manufacturer's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2N4929 transistor is 50mA.
The maximum power dissipation of the 2N4929 transistor is 1W.
The maximum operating temperature for the 2N4929 transistor is 175°C.
The 2N4929 transistor is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2N4929 transistor is 1 Unlimited.
