| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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131 pcs
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131 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N4923G is a medium-power NPN silicon transistor from onsemi designed for driver circuits, switching, and amplifier applications. It features a collector-emitter voltage (VCEO) of 80V and a continuous collector current rating of 1A, with a peak current capability of 3A. The device offers a maximum power dissipation of 30W at a case temperature of 25°C, derated linearly above 25°C at 0.24 W/°C.
Electrical characteristics include a DC current gain (hFE) of minimum 30 at Ic=500mA and Vce=1V, and a low Vce saturation voltage of 600mV maximum at Ib=100mA and Ic=1A. The transition frequency is nominally 3MHz. The transistor is housed in a TO-225AA (TO-126-3) through-hole package and is Pb-Free and RoHS compliant per the datasheet.
This device is complementary to the PNP 2N4920G and is suitable for general-purpose power switching and linear amplification in industrial and consumer electronics.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.39 | $0.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 80V.
The maximum continuous collector current is 1A, with a peak current capability of 3A.
The device is available in a TO-225AA (TO-126-3) through-hole package.
The operating junction temperature range is -65°C to 150°C.
The datasheet states the device is Pb-Free and RoHS Compliant.
Maximum power dissipation is 30W at a case temperature of 25°C, derated above 25°C at 0.24 W/°C.
The minimum DC current gain is 30 at Ic=500mA and Vce=1V.