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2N4922G The 2N4922G is a 60V, 1A NPN medium-power silicon transistor in a TO-126 through-hole package, designed for driver circuits, switching, and amplifier applications.
Mfr Part #:

2N4922G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The 2N4922G is a 60V, 1A NPN medium-power silicon transistor in a TO-126 through-hole package, designed for driver circuits, switching, and amplifier applications.
Total Stock: 2,404 pcs
$ Price Range: $0.56 - $1.33

2N4922G Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,404 pcs
2404 pcs On Request 1 On Request On Request 1915+ On Request On Request

2N4922G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB)
Collector Current - Peak (ICM)
Collector Cutoff Current (ICEO)
Collector-Base Voltage (VCB)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Derating Factor
Emitter-Base Voltage (VEB)
Frequency
Mounting Type
Operating Temperature
Power
Standard Package Quantity
Storage Temperature
Supplier Device Package
Tape & Reel
Thermal Resistance Junction-to-Case (RθJC)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N4922G Description

Short technical summary and product information.

The 2N4922G is an NPN silicon transistor from On Semiconductor designed for medium-power applications. It features a collector-emitter voltage (VCEO) of 60V and a continuous collector current rating of 1A, with a peak current capability of 3A. The device can dissipate up to 30W at a case temperature of 25°C, with a derating factor of 0.24 W/°C above 25°C.

 

This transistor offers a DC current gain (hFE) of at least 30 at 500mA and 1V, and a low saturation voltage of 600mV at 1A collector current. It is housed in a TO-225AA / TO-126-3 through-hole package, making it suitable for PCB mounting. The operating junction temperature range is -65°C to 150°C.

 

The 2N4922G is Pb-Free and RoHS3 compliant. It is intended for use in driver circuits, switching applications, and general-purpose amplifier designs. The PNP complement is the 2N4920G.

2N4922G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: 2N492x
Canonical Name: 2N4922G NPN Medium-Power Silicon Transistor
Subcategory: Medium-Power Plastic Transistor

2N4922G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N4922G Estimated Pricing

Qty Low High
1+ $1.33 $1.33
10+ $0.84 $0.84
100+ $0.56 $0.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N4922G Features

  • NPN silicon medium-power transistor.
  • 60V collector-emitter voltage rating.
  • 1A continuous collector current capability.
  • 30W power dissipation at 25°C case.
  • RoHS3 compliant and Pb-Free package.

2N4922G Applications

  • Ideal for general purpose driver circuits.
  • Used in switching and amplifier applications.
  • Suitable for medium-power linear designs.

2N4922G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the 2N4922G?

The collector-emitter voltage (VCEO) is 60V minimum.

What is the maximum continuous collector current?

The maximum continuous collector current (IC) is 1A.

What is the power dissipation of the 2N4922G?

The maximum power dissipation is 30W at a case temperature of 25°C, derating at 0.24 W/°C above 25°C.

What package does the 2N4922G come in?

The 2N4922G is available in a TO-225AA / TO-126-3 through-hole package.

What is the operating temperature range?

The operating junction temperature range is -65°C to 150°C.

Is the 2N4922G RoHS compliant?

Yes, the 2N4922G is RoHS3 compliant and Pb-Free.

What is the DC current gain (hFE) of the 2N4922G?

The minimum DC current gain is 30 at a collector current of 500mA and VCE of 1V.

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