2N4921G NPN silicon power transistor rated for 40V VCEO and 1A continuous collector current. Delivers 30W power dissipation in a through-hole TO-225/TO-126 package.
Mfr Part #:

2N4921G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN silicon power transistor rated for 40V VCEO and 1A continuous collector current. Delivers 30W power dissipation in a through-hole TO-225/TO-126 package.
Total Stock: 313 pcs
$ Price Range: $8.56

2N4921G Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
163 pcs
163 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
150 pcs
150 pcs On Request 1 On Request On Request On Request On Request On Request

2N4921G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current - Continuous (IB)
Collector Current - Peak (ICM)
Collector Cutoff Current (ICEO)
Collector Cutoff Current (ICEX)
Collector-Base Voltage (VCB)
Collector-Emitter Sustaining Voltage (VCEO(sus))
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEB)
Frequency
Lead Style
Mounting Type
Operating Temperature
Power
Standard Package Qty
Storage Temperature
Supplier Device Package
Tape & Reel
Thermal Resistance Junction-to-Case (RθJC)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N4921G Description

Short technical summary and product information.

The 2N4921G is an NPN silicon power transistor from onsemi designed for general-purpose driver, switching, and amplifier circuits. It features a maximum collector-emitter voltage of 40V and can handle a continuous collector current of 1A, with peak current capability up to 3A. The device provides excellent power dissipation of 30W at a case temperature of 25°C, making it suitable for medium-power applications.

 

The transistor offers a minimum DC current gain (hFE) of 30 at 500mA collector current and a low saturation voltage of 600mV at 1A collector current. It is housed in a Pb-free, RoHS-compliant TO-225 (CASE 77-09) / TO-126-3 through-hole package, with a standard packaging of 500 units per box.

 

Typical applications include driver circuits, switching power supplies, and linear amplifiers. This device complements the PNP 2N4920G transistor for push-pull configurations.

2N4921G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: 2N4921
Canonical Name: 2N4921G NPN Silicon Power Transistor
Subcategory: Bipolar (BJT) Single

2N4921G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N4921G Estimated Pricing

Qty Low High
163+ $8.56 $8.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N4921G Features

  • NPN silicon power transistor 40V VCEO.
  • 1A continuous collector current rating.
  • 30W power dissipation at 25°C case.
  • Low saturation voltage of 600mV.
  • Pb-free and RoHS compliant package.

2N4921G Applications

  • General purpose driver and switching circuits.
  • Medium-power linear amplifier stages.
  • Complementary pair with 2N4920G PNP transistor.

2N4921G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of 2N4921G?

The maximum collector-emitter voltage (VCEO) is 40V.

What is the continuous collector current rating?

The maximum continuous collector current (IC) is 1A, with peak capability up to 3A.

What is the power dissipation of the 2N4921G?

The maximum power dissipation is 30W at a case temperature (TC) of 25°C.

What package does the 2N4921G come in?

It comes in a through-hole TO-225 (CASE 77-09) / TO-126-3 package. The supplier device package is TO-126.

What is the operating temperature range?

The operating junction temperature range is -65°C to 150°C.

Is the 2N4921G RoHS compliant?

Yes, it is RoHS3 compliant and Pb-Free.

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